Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process during LDE is the removal of the deposited droplet material from its initial position during post-growth annealing. This paper studies the droplet material removal experimentally and discusses the results in terms of a simple model. The first set of experiments demonstrates that the droplet material is removed by detachment of atoms and spreading over the substrate surface. Further experiments establish that droplet etching requires a small arsenic background pressure to inhibit re-attachment of the detached atoms. Surfaces processed under completely minimized As pressure show no hole formation but instead a conservation of the initial droplets. Under consideration of these results, a simple kinetic scaling model of the etching process is proposed that quantitatively reproduces experimental data on the hole depth as a function of the process temperature and deposited amount of droplet material. Furthermore, the depth dependence of the hole side-facet angle is analyzed.

Heyn, C., Bartsch, T., Sanguinetti, S., Jesson, D., Hansen, W. (2015). Dynamics of mass transport during nanohole drilling by local droplet etching. NANOSCALE RESEARCH LETTERS, 10(1), 67 [10.1186/s11671-015-0779-5].

Dynamics of mass transport during nanohole drilling by local droplet etching

SANGUINETTI, STEFANO;
2015

Abstract

Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process during LDE is the removal of the deposited droplet material from its initial position during post-growth annealing. This paper studies the droplet material removal experimentally and discusses the results in terms of a simple model. The first set of experiments demonstrates that the droplet material is removed by detachment of atoms and spreading over the substrate surface. Further experiments establish that droplet etching requires a small arsenic background pressure to inhibit re-attachment of the detached atoms. Surfaces processed under completely minimized As pressure show no hole formation but instead a conservation of the initial droplets. Under consideration of these results, a simple kinetic scaling model of the etching process is proposed that quantitatively reproduces experimental data on the hole depth as a function of the process temperature and deposited amount of droplet material. Furthermore, the depth dependence of the hole side-facet angle is analyzed.
Articolo in rivista - Articolo scientifico
Droplet epitaxy; Droplet etching; Growth modelling; Mass transport; Nanoholes; Self-assembly; Semiconductor nanostructures; Materials Science (all); Condensed Matter Physics
English
67
Heyn, C., Bartsch, T., Sanguinetti, S., Jesson, D., Hansen, W. (2015). Dynamics of mass transport during nanohole drilling by local droplet etching. NANOSCALE RESEARCH LETTERS, 10(1), 67 [10.1186/s11671-015-0779-5].
File in questo prodotto:
File Dimensione Formato  
10281-97078.pdf

accesso aperto

Tipologia di allegato: Publisher’s Version (Version of Record, VoR)
Dimensione 1.87 MB
Formato Adobe PDF
1.87 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/97078
Citazioni
  • Scopus 38
  • ???jsp.display-item.citation.isi??? 37
Social impact