We show that independent size and morphology engineering of epitaxial quantum dots can be obtained using a kinetically controlled quantum dot fabrication procedure, namely droplet epitaxy. Due to the far-from-equilibrium droplet epitaxy procedure, which is based on the crystallization, under As flux, of a nanometric droplet of Ga, independent and precise tuning of quantum dot size, aspect ratio, and faceting can be achieved. The dependence of the dot morphology on the growth conditions is interpreted and described quantitatively through a model that takes into account the crystallization kinetics of the Ga stored in the droplet under As flux.

Bietti, S., Bocquel, J., Adorno, S., Mano, T., Keizer, J., Koenraad, P., et al. (2015). Precise shape engineering of epitaxial quantum dots by growth kinetics. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 92(7) [10.1103/PhysRevB.92.075425].

Precise shape engineering of epitaxial quantum dots by growth kinetics

BIETTI, SERGIO
Primo
;
ADORNO, SILVIA;SANGUINETTI, STEFANO
Ultimo
2015

Abstract

We show that independent size and morphology engineering of epitaxial quantum dots can be obtained using a kinetically controlled quantum dot fabrication procedure, namely droplet epitaxy. Due to the far-from-equilibrium droplet epitaxy procedure, which is based on the crystallization, under As flux, of a nanometric droplet of Ga, independent and precise tuning of quantum dot size, aspect ratio, and faceting can be achieved. The dependence of the dot morphology on the growth conditions is interpreted and described quantitatively through a model that takes into account the crystallization kinetics of the Ga stored in the droplet under As flux.
Articolo in rivista - Articolo scientifico
Condensed Matter Physics; Electronic, Optical and Magnetic Materials
English
19-ago-2015
2015
92
7
075425
partially_open
Bietti, S., Bocquel, J., Adorno, S., Mano, T., Keizer, J., Koenraad, P., et al. (2015). Precise shape engineering of epitaxial quantum dots by growth kinetics. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 92(7) [10.1103/PhysRevB.92.075425].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/97072
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