Abstract The CLARO-CMOS is a prototype ASIC that allows fast photon counting with low power consumption, built in AMS 0.35 μm CMOS technology. It is intended to be used as a front-end readout for the upgraded LHCb RICH detectors. In this environment, assuming 10 years of operation at the nominal luminosity expected after the upgrade, the ASIC must withstand a total fluence of about 6 × 1012 1 MeV neq/cm2 and a total ionising dose of 400 krad. Long term stability of the electronics front-end is essential and the effects of radiation damage on the CLARO-CMOS performance must be carefully studied. This paper describes results of multi-step irradiation tests with protons up to the dose of ∼8 Mrad, including measurement of single event effects during irradiation and chip performance evaluation before and after each irradiation step.

Andreotti, M., Baldini, W., Calabrese, R., Carniti, P., Cassina, L., Cotta Ramusino, A., et al. (2015). Irradiation of the CLARO-CMOS chip, a fast ASIC for single-photon counting. Intervento presentato a: New Developments in Photodetection - NDIP14, Tours, France [10.1016/j.nima.2014.12.012].

Irradiation of the CLARO-CMOS chip, a fast ASIC for single-photon counting

CARNITI, PAOLO;CASSINA, LORENZO;GIACHERO, ANDREA;GOTTI, CLAUDIO;MAINO, MATTEO;PESSINA, GIANLUIGI EZIO
Penultimo
;
2015

Abstract

Abstract The CLARO-CMOS is a prototype ASIC that allows fast photon counting with low power consumption, built in AMS 0.35 μm CMOS technology. It is intended to be used as a front-end readout for the upgraded LHCb RICH detectors. In this environment, assuming 10 years of operation at the nominal luminosity expected after the upgrade, the ASIC must withstand a total fluence of about 6 × 1012 1 MeV neq/cm2 and a total ionising dose of 400 krad. Long term stability of the electronics front-end is essential and the effects of radiation damage on the CLARO-CMOS performance must be carefully studied. This paper describes results of multi-step irradiation tests with protons up to the dose of ∼8 Mrad, including measurement of single event effects during irradiation and chip performance evaluation before and after each irradiation step.
No
paper
Front-end electronics; Photomultipliers; Photon counting; Radiation hardness; Instrumentation; Nuclear and High Energy Physics
English
New Developments in Photodetection - NDIP14
http://www.sciencedirect.com/science/journal/01689002
Andreotti, M., Baldini, W., Calabrese, R., Carniti, P., Cassina, L., Cotta Ramusino, A., et al. (2015). Irradiation of the CLARO-CMOS chip, a fast ASIC for single-photon counting. Intervento presentato a: New Developments in Photodetection - NDIP14, Tours, France [10.1016/j.nima.2014.12.012].
Andreotti, M; Baldini, W; Calabrese, R; Carniti, P; Cassina, L; Cotta Ramusino, A; Fiorini, M; Giachero, A; Gotti, C; Luppi, E; Maino, M; Malaguti, R; Pessina, G; Tomassetti, L
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/90821
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