Accurate first principles calculations reveal that a huge inward relaxation turns the originally stepped Ge(105) surface into a flat one, with surface energy equal to the Ge(001)p(2×2) at the bulk lattice parameter. Under in-plane compression (up to 4%) the surface energy of the (105) gets sizably lower than the (001), because of a combination of the elastic contribution provided by stretched dimers at the rebonded steps and the dangling-bond energy lowering generated by enhanced tilting of these dimers. © 2004 Elsevier B.V. All rights reserved.
Migas, D.B., Cereda, S., Montalenti, F., & Miglio, L. (2004). Electronic and elastic contributions in the enhanced stability of Ge(105) under compressive strain. SURFACE SCIENCE, 556(2-3), 121-128.
Citazione: | Migas, D.B., Cereda, S., Montalenti, F., & Miglio, L. (2004). Electronic and elastic contributions in the enhanced stability of Ge(105) under compressive strain. SURFACE SCIENCE, 556(2-3), 121-128. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Electronic and elastic contributions in the enhanced stability of Ge(105) under compressive strain |
Autori: | Migas, DB; Cereda, S; Montalenti, F; Miglio, L |
Autori: | |
Data di pubblicazione: | mag-2004 |
Lingua: | English |
Rivista: | SURFACE SCIENCE |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.susc.2004.03.023 |
Appare nelle tipologie: | 01 - Articolo su rivista |