This review emphasizes progress in theoretical simulation and experiments that have been performed in the past years for semiconducting silicides. New fundamental electronic and optical properties of Ca<sub>2</sub>Si and BaSi <sub>2</sub>, recently found RuSi<sub>2</sub> phase, ternaries in Fe-Os-Si and Ru-Os-Si systems, β-FeSi<sub>2</sub>, Mg<sub>2</sub>Si and CrSi<sub>2</sub> with stretched and compressed lattices as well as transport properties of β-FeSi<sub>2</sub>, ReSi<sub>1.75</sub>, Ru<sub>2</sub>Si<sub>3</sub> are presented. Prospects for practical applications of semiconducting silicides are discussed. © 2004 Published by Elsevier B.V.
Ivanenko, L., Shaposhnikov, V., Filonov, A., Krivosheeva, A., Borisenka, V., Migas, D., et al. (2004). Electronic properties of semiconducting silicides: fundamentals and recent predictions. THIN SOLID FILMS, 461(1), 141-147 [10.1016/j.tsf.2004.02.088].
Electronic properties of semiconducting silicides: fundamentals and recent predictions
MIGLIO, LEONIDA;
2004
Abstract
This review emphasizes progress in theoretical simulation and experiments that have been performed in the past years for semiconducting silicides. New fundamental electronic and optical properties of Ca2Si and BaSi 2, recently found RuSi2 phase, ternaries in Fe-Os-Si and Ru-Os-Si systems, β-FeSi2, Mg2Si and CrSi2 with stretched and compressed lattices as well as transport properties of β-FeSi2, ReSi1.75, Ru2Si3 are presented. Prospects for practical applications of semiconducting silicides are discussed. © 2004 Published by Elsevier B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.