A combined analysis, based on angle-resolved X-ray photoelectron spectroscopy and multiple-internalreflection infrared spectroscopy, of the (100) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH<sub>2</sub> and SiH<sub>3</sub> terminations, but contains (in addition to sub-stoichiometric oxidized silicon) a form of reduced silicon, not consistent with the currently accepted picture of the native HF<sub>aq</sub>-etched surface. Copyright © 2007 John Wiley & Sons, Ltd.
Cerofolini, G.F., Giussani, A., Carone Fabiani, F., Modelli, A., Mascolo, D., Ruggiero, D., et al. (2007). Combined IR and XPS analysis of the native (100) surface of single crystalline silicon after HFaq etching. SURFACE AND INTERFACE ANALYSIS, 39(10), 836-844.
Citazione: | Cerofolini, G.F., Giussani, A., Carone Fabiani, F., Modelli, A., Mascolo, D., Ruggiero, D., et al. (2007). Combined IR and XPS analysis of the native (100) surface of single crystalline silicon after HFaq etching. SURFACE AND INTERFACE ANALYSIS, 39(10), 836-844. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Combined IR and XPS analysis of the native (100) surface of single crystalline silicon after HFaq etching |
Autori: | Cerofolini, GF; Giussani, A; Carone Fabiani, F; Modelli, A; Mascolo, D; Ruggiero, D; Narducci, D; Romano, E |
Autori: | |
Data di pubblicazione: | 2007 |
Lingua: | English |
Rivista: | SURFACE AND INTERFACE ANALYSIS |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1002/sia.2599 |
Appare nelle tipologie: | 01 - Articolo su rivista |