In this Chapter it will be shown how surface chemistry can master silicon surface properties. Major differences between gas phase and solution chemistry will be remarked. The microscopic interaction of small molecules (either charged or neutral) with the Si surface will be shown to be based onto two completely different mechanisms. Gas phase (or plasma) chemistry relies upon high energies and on non-polar reaction paths. Instead, solution chemistry is ruled by low energies and by polar mechanisms. This is further complicated by the simultaneous presence of species in equilibrium with each other, and by complex phenomena such as solvatation. In spite of these differences, many structural aspects of chemically reconstructed Si surfaces will be shown to be similar, since the same static quantities rule dissimilar dynamic scenarios. Finally, recent areas of research will be commented upon, mainly relating to the interaction of organic molecules with silicon, either in view of the need of providing efficient methods of ultracleaning or of that of engineering surfaces to devise novel Si-based devices.
|Citazione:||Narducci, D. (2002). Interaction of small molecules with silicon surfaces. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 85-86, 337-352.|
|Tipo:||Articolo in rivista - Articolo scientifico|
|Carattere della pubblicazione:||Scientifica|
|Titolo:||Interaction of small molecules with silicon surfaces|
|Data di pubblicazione:||2002|
|Rivista:||DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA|
|Appare nelle tipologie:||01 - Articolo su rivista|