Mn2þ doped ZnS nanoparticles (ZnS:Mn2þ NPs) are non-toxic systems known for their attractive light emitting properties. This paper discusses the luminescence properties of ZnS:Mn2þ NPs prepared by wet chemical synthesis with the objective of using them as down-shifters. A modification of the incident solar spectrum inducing improved exploitation of the UV region was expected to increase the efficiency of single junction cells with an optimal absorber band gap around 1.1 eV. The potential of ZnS:Mn2þ NPs as down-shifters was therefore demonstrated on both Si and Cu(In,Ga)Se2 solar
LE DONNE, A., Jana, S., Banerjee, S., Basu, S., Binetti, S. (2013). Optimized luminescence properties of Mn doped ZnS nanoparticles for photovoltaic applications. JOURNAL OF APPLIED PHYSICS, 113(1) [10.1063/1.4772668].
Optimized luminescence properties of Mn doped ZnS nanoparticles for photovoltaic applications
LE DONNE, ALESSIAPrimo
;JANA, SOURAV KANTISecondo
;BINETTI, SIMONA OLGAUltimo
2013
Abstract
Mn2þ doped ZnS nanoparticles (ZnS:Mn2þ NPs) are non-toxic systems known for their attractive light emitting properties. This paper discusses the luminescence properties of ZnS:Mn2þ NPs prepared by wet chemical synthesis with the objective of using them as down-shifters. A modification of the incident solar spectrum inducing improved exploitation of the UV region was expected to increase the efficiency of single junction cells with an optimal absorber band gap around 1.1 eV. The potential of ZnS:Mn2þ NPs as down-shifters was therefore demonstrated on both Si and Cu(In,Ga)Se2 solar
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