We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer. © 2013 AIP Publishing LLC.
Bietti, S., Cavigli, L., Accanto, N., Minari, S., Abbarchi, M., Isella, G., et al. (2013). High quality GaAs single photon emitters on Si substrate. In T. Ihn, C. Rossler, A. Kozikov (a cura di), Physics of Semiconductors. 31st International Conference on the Physics of Semiconductors (ICPS), Zurich, Switzerland, Jul 29 - Aug 03, 2012 (pp. 433-434). American Institute of Physics Inc. [10.1063/1.4848471].
High quality GaAs single photon emitters on Si substrate
BIETTI, SERGIO
;SANGUINETTI, STEFANOUltimo
2013
Abstract
We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer. © 2013 AIP Publishing LLC.
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