The effect of a thin Ta layer at the Si/Ti interface on the intermediate phase formation has been studied in detail by in situ sheet resistance, x-ray diffraction, transmission electron microscopy and Rutherford backscattering spectroscopy of partially reacted samples. When a Ta layer is deposited at the Si/Ti interface, a new intermediate phase has been detected, i.e. the hexagonal TiSi2 C40. This phase grows on the C40-TaSi2 that is formed at the interface with silicon. The lattice parameters of the C40-TiSi2 obtained by ab initio calculations agree quite well with the experimental ones. (C) 2001 American Institute of Physics.

La Via, F., Mammoliti, F., Corallo, G., Grimaldi, M., Migas, D., Miglio, L. (2001). Formation of the TiSi2 C40 as an intermediate phase during the reaction of the Si/Ta/Ti system. APPLIED PHYSICS LETTERS, 78(13), 1864-1866 [10.1063/1.1359142].

Formation of the TiSi2 C40 as an intermediate phase during the reaction of the Si/Ta/Ti system

MIGLIO, LEONIDA
2001

Abstract

The effect of a thin Ta layer at the Si/Ti interface on the intermediate phase formation has been studied in detail by in situ sheet resistance, x-ray diffraction, transmission electron microscopy and Rutherford backscattering spectroscopy of partially reacted samples. When a Ta layer is deposited at the Si/Ti interface, a new intermediate phase has been detected, i.e. the hexagonal TiSi2 C40. This phase grows on the C40-TaSi2 that is formed at the interface with silicon. The lattice parameters of the C40-TiSi2 obtained by ab initio calculations agree quite well with the experimental ones. (C) 2001 American Institute of Physics.
Articolo in rivista - Articolo scientifico
ab initio; TiSi
English
26-mar-2001
78
13
1864
1866
none
La Via, F., Mammoliti, F., Corallo, G., Grimaldi, M., Migas, D., Miglio, L. (2001). Formation of the TiSi2 C40 as an intermediate phase during the reaction of the Si/Ta/Ti system. APPLIED PHYSICS LETTERS, 78(13), 1864-1866 [10.1063/1.1359142].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/6573
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