We perform molecular dynamics simulations to obtain the stress and strain distributions for Ge pyramids with {105} facets on Si(001). We show that the strain induced in the substrate is large and increasing with the pyramid size: up to 0.7% for the 22 nm in base, and corresponds to substrate bending below the pyramid, (C) 2002 Elsevier Science B.V. All rights reserved.
Raiteri, P., Valentinotti, F., Miglio, L. (2002). Stress, strain and elastic energy at nanometric Ge dots on Si(001). APPLIED SURFACE SCIENCE, 188(1-2), 4-8 [10.1016/S0169-4332(01)00702-4].
Stress, strain and elastic energy at nanometric Ge dots on Si(001)
MIGLIO, LEONIDA
2002
Abstract
We perform molecular dynamics simulations to obtain the stress and strain distributions for Ge pyramids with {105} facets on Si(001). We show that the strain induced in the substrate is large and increasing with the pyramid size: up to 0.7% for the 22 nm in base, and corresponds to substrate bending below the pyramid, (C) 2002 Elsevier Science B.V. All rights reserved.
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