In this letter, we discuss the interesting changes in the band structure of two ternary (FeOs)Si-2 configurations with respect to the isostructural binary beta -FeSi2 and OsSi2 compounds. Our first-principle calculations also demonstrate that one of the ternaries is a direct-bandgap semiconductor with an appreciable value of the oscillator strength of the first direct transition at 0.78 eV. (C) 2001 American Institute of Physics
Migas, D., Miglio, L. (2001). Electronic and optical properties of the (FeOs)Si-2 ternaries. APPLIED PHYSICS LETTERS, 79(14), 2175-2177 [10.1063/1.1408907].
Electronic and optical properties of the (FeOs)Si-2 ternaries
Miglio, L.
2001
Abstract
In this letter, we discuss the interesting changes in the band structure of two ternary (FeOs)Si-2 configurations with respect to the isostructural binary beta -FeSi2 and OsSi2 compounds. Our first-principle calculations also demonstrate that one of the ternaries is a direct-bandgap semiconductor with an appreciable value of the oscillator strength of the first direct transition at 0.78 eV. (C) 2001 American Institute of Physics
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