By using scanning tunneling microscopy we found that the surface reconstruction of Ge/Si(001) epilayers evolves from (MxN) to (2xN), and eventually to (2x1), during exposure to a Si flux. This sequence appears to be just the inverse of that observed during the growth of Ge or SiGe alloys on Si(001). However, molecular dynamics simulations supported by ab initio calculations allow us to interpret this morphological evolution in terms of Si migration through the epilayer and complex Si-Ge intermixing below the top Ge layer.

Rastelli, A., von Kanel, H., Albini, G., Raiteri, P., Migas, D., Miglio, L. (2003). Morphological and compositional evolution of the Ge/Si(001) surface during exposure to a Si flux. PHYSICAL REVIEW LETTERS, 90(21), 2161041-2161044 [10.1103/PhysRevLett.90.216104].

Morphological and compositional evolution of the Ge/Si(001) surface during exposure to a Si flux

MIGLIO, LEONIDA
2003

Abstract

By using scanning tunneling microscopy we found that the surface reconstruction of Ge/Si(001) epilayers evolves from (MxN) to (2xN), and eventually to (2x1), during exposure to a Si flux. This sequence appears to be just the inverse of that observed during the growth of Ge or SiGe alloys on Si(001). However, molecular dynamics simulations supported by ab initio calculations allow us to interpret this morphological evolution in terms of Si migration through the epilayer and complex Si-Ge intermixing below the top Ge layer.
Articolo in rivista - Articolo scientifico
surface reconstruction; epitaxy
English
30-mag-2003
90
21
2161041
2161044
216104
none
Rastelli, A., von Kanel, H., Albini, G., Raiteri, P., Migas, D., Miglio, L. (2003). Morphological and compositional evolution of the Ge/Si(001) surface during exposure to a Si flux. PHYSICAL REVIEW LETTERS, 90(21), 2161041-2161044 [10.1103/PhysRevLett.90.216104].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/6446
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