We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction yields that nucleation in the pits provides a higher relaxation. Using an innovative, model-free fitting procedure based on self-consistent solutions of the elastic problem, we provide compositional and elastic-energy maps. Islands grown on flat substrates exhibit stronger composition gradients and do not show a monotonic decrease of elastic energy with height. Both phenomena are explained using both thermodynamic and kinetic arguments.

Schulli, T., Vastola, G., Richard, M., Malachias, A., Renaud, G., Uhlik, F., et al. (2009). Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates. PHYSICAL REVIEW LETTERS, 102(2) [10.1103/PhysRevLett.102.025502].

Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates

MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA;
2009

Abstract

We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction yields that nucleation in the pits provides a higher relaxation. Using an innovative, model-free fitting procedure based on self-consistent solutions of the elastic problem, we provide compositional and elastic-energy maps. Islands grown on flat substrates exhibit stronger composition gradients and do not show a monotonic decrease of elastic energy with height. Both phenomena are explained using both thermodynamic and kinetic arguments.
Si
Articolo in rivista - Articolo scientifico
Scientifica
patterning; elastic relaxation; FEM;
English
Schulli, T., Vastola, G., Richard, M., Malachias, A., Renaud, G., Uhlik, F., et al. (2009). Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates. PHYSICAL REVIEW LETTERS, 102(2) [10.1103/PhysRevLett.102.025502].
Schulli, T; Vastola, G; Richard, M; Malachias, A; Renaud, G; Uhlik, F; Montalenti, F; Chen, G; Miglio, L; Schaffler, F; Bauer, G
File in questo prodotto:
File Dimensione Formato  
Enhanced_Relaxation_and_Intermixing_in_Ge_Islands_Grown_on_Pit-Patterned_Si(001)_Substrates.pdf

accesso aperto

Tipologia di allegato: Publisher’s Version (Version of Record, VoR)
Dimensione 703.37 kB
Formato Adobe PDF
703.37 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/6407
Citazioni
  • Scopus 83
  • ???jsp.display-item.citation.isi??? 82
Social impact