IGS-IGD Gate Current Noise Model at Low Frequency

This paper shows how in nanoscaled CMOS technologies the larger gate current, due to the oxide thickness, can impact the noise performances of the circuit. That gate currents creates a shot noise component which, under certain circumstances such as a capacitive-only feedback, can be amplified and became a relevant component or even the main contributor. Gate current noise is a well known parameters for RF circuits, due to the induced gate noise components, which dominates at high frequency. This paper shows that, in nanoscaled technology such as the 65 nm, this noise is the dominating contributor at low frequency, due to the shot noise component.