The control of the chemical state of the inner surfaces of nanocavities (NCs) produced by the annealing of helium-implanted silicon has influence on lifetime control, gettering and wafer bonding. In this work it is demonstrated that the etching in HFaq of (1 0 0) silicon containing a buried array of NCs produces a giant injection of hydrogen with the consequent passivation of the inner surfaces, mainly via the formation of silicon monohydride at (1 1 1) faces and monohydride dimers at 2 × 1 reconstructed (1 0 0) faces. These terminations are very stable and survive heat treatments at 700 °C. © 2009 IOP Publishing Ltd.
Cerofolini, G., Romano, E., Narducci, D., Corni, F., Frabboni, S., Ottaviani, G., et al. (2009). Hydrogen injection and retention in nanocavities of single-crystalline silicon. JOURNAL OF PHYSICS D. APPLIED PHYSICS, 42(6), 062001 [10.1088/0022-3727/42/6/062001].
Hydrogen injection and retention in nanocavities of single-crystalline silicon
NARDUCCI, DARIO;
2009
Abstract
The control of the chemical state of the inner surfaces of nanocavities (NCs) produced by the annealing of helium-implanted silicon has influence on lifetime control, gettering and wafer bonding. In this work it is demonstrated that the etching in HFaq of (1 0 0) silicon containing a buried array of NCs produces a giant injection of hydrogen with the consequent passivation of the inner surfaces, mainly via the formation of silicon monohydride at (1 1 1) faces and monohydride dimers at 2 × 1 reconstructed (1 0 0) faces. These terminations are very stable and survive heat treatments at 700 °C. © 2009 IOP Publishing Ltd.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
