An analysis, based on angle-resolved X-ray photoelectron spectroscopy, multiple-internal-reflection infrared spectroscopy, and atomic force microscopy, of device-quality (1 0 0)silicon surfaces after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH<sub>2</sub>and SiH<sub>3</sub> terminations, but contains sub-stoichiometric oxidized silicon. The analysis shows moreover the existence of a form of reduced silicon, not consistent with the currently accepted picture of the native HF<sub>aq</sub>-etched surface. © 2008 Elsevier B.V. All rights reserved.
Cerofolini, G.F., Giussani, A., Modelli, A., Mascolo, D., Ruggiero, D., Narducci, D., et al. (2008). Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching’. APPLIED SURFACE SCIENCE, 254, 5781-5790.
Citazione: | Cerofolini, G.F., Giussani, A., Modelli, A., Mascolo, D., Ruggiero, D., Narducci, D., et al. (2008). Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching’. APPLIED SURFACE SCIENCE, 254, 5781-5790. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Chemical, energetic, and geometric heterogeneity of device-quality (1 0 0) surfaces of single crystalline silicon after HFaq etching’ |
Autori: | Cerofolini, GF; Giussani, A; Modelli, A; Mascolo, D; Ruggiero, D; Narducci, D; Romano, E |
Autori: | |
Data di pubblicazione: | 2008 |
Lingua: | English |
Rivista: | APPLIED SURFACE SCIENCE |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.apsusc.2008.03.058 |
Appare nelle tipologie: | 01 - Articolo su rivista |