In a stringent and near oxygen-free environment, Si-H surfaces were introduced to a trifluoroalkyne, an alcohol-derivatized alkyne, as well as an equal mixture of both alkynes at a temperature of 130°C. Contact angle measurements, high-resolution X-ray photoelectron spectroscopy (XPS), and angle-resolved XPS were performed to examine the system. Si-H surfaces were found to have a strong preference towards the formation of Si-O-C rather than Si-C bonds when the alcohol and alkyne reactivities were compared.
Khung, Y., Ngalim, S., Meda, L., Narducci, D. (2014). Preferential formation of Si-O-C over Si-C linkage upon thermal grafting on hydrogen-terminated silicon (111). CHEMISTRY-A EUROPEAN JOURNAL, 20(46), 15151-15158 [10.1002/chem.201403014].
Preferential formation of Si-O-C over Si-C linkage upon thermal grafting on hydrogen-terminated silicon (111)
KHUNG, YIT LUNG
Primo
;NARDUCCI, DARIOUltimo
2014
Abstract
In a stringent and near oxygen-free environment, Si-H surfaces were introduced to a trifluoroalkyne, an alcohol-derivatized alkyne, as well as an equal mixture of both alkynes at a temperature of 130°C. Contact angle measurements, high-resolution X-ray photoelectron spectroscopy (XPS), and angle-resolved XPS were performed to examine the system. Si-H surfaces were found to have a strong preference towards the formation of Si-O-C rather than Si-C bonds when the alcohol and alkyne reactivities were compared.
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Preferential Formation of Si-O-C over Si-C Linkage upon Thermal Grafting on Hydrogen-Terminated Silicon (111).pdf
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