The deposition of thin films of pure Ge-doped silica was carried out using rf-magnetron sputtering, starting from targets prepared by a sol-gel route. The combination of atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS), and spectral ellipsometry allowed to obtain an insight into morphology, microstructure, and chemical composition of the thin films. Inclusions of SiO in the SiO2 films were obtained under nonreactive sputtering conditions. The shape of the SiO inclusions was found to depend on the temperature substrate, passing from columnar to disk shaped.
Quartarone, E., Mustarelli, P., Marabelli, F., Battagliarin, M., Turato, S. (2004). GeO2-doped SiO2 sputtered thin films: Microstructure, stoichiometry, and optical properties. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS, 22(6), 2234-2238 [10.1116/1.1789213].
GeO2-doped SiO2 sputtered thin films: Microstructure, stoichiometry, and optical properties
Mustarelli, P;
2004
Abstract
The deposition of thin films of pure Ge-doped silica was carried out using rf-magnetron sputtering, starting from targets prepared by a sol-gel route. The combination of atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS), and spectral ellipsometry allowed to obtain an insight into morphology, microstructure, and chemical composition of the thin films. Inclusions of SiO in the SiO2 films were obtained under nonreactive sputtering conditions. The shape of the SiO inclusions was found to depend on the temperature substrate, passing from columnar to disk shaped.
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