We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape depends on time. Electron spin resonance measurements performed ex situ a few hours after the end of exposure permit to complete the information acquired by optical absorption by detection of the paramagnetic Ge(1) (GeO4)- and Ge-E' (≡Ge•) centers laser-induced in the samples.
Messina, F., Cannas, M., Boscaino, R., Grandi, S., Mustarelli, P. (2007). Optical absorption induced by UV laser radiation in Ge-doped amorphous silica probed by in situ absorption spectroscopy. In 10th Europhysical Conference on Defects in Insulating Materials (pp.1143-1143) [10.1002/pssc.200673788].
Optical absorption induced by UV laser radiation in Ge-doped amorphous silica probed by in situ absorption spectroscopy
Mustarelli Piercarlo
2007
Abstract
We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape depends on time. Electron spin resonance measurements performed ex situ a few hours after the end of exposure permit to complete the information acquired by optical absorption by detection of the paramagnetic Ge(1) (GeO4)- and Ge-E' (≡Ge•) centers laser-induced in the samples.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
