The high vertical index contrast and the small thickness of thin InP membranes (200nm) bonded with BCB allow the achievement of very small devices. In this paper we will present some performances of such photonic integrated circuit building blocks (wires, 3dB splitters and ring resonators). © VDE VERLAG GMBH.

Bordas, F., Roelkens, G., Zhang, R., Geluk, E., Karouta, F., Van Der Tol, J., et al. (2009). Compact passive devices in InP membrane on silicon. In European Conference on Optical Communication, ECOC. VDE VERLAG GMBH.

Compact passive devices in InP membrane on silicon

Notzel R.;
2009

Abstract

The high vertical index contrast and the small thickness of thin InP membranes (200nm) bonded with BCB allow the achievement of very small devices. In this paper we will present some performances of such photonic integrated circuit building blocks (wires, 3dB splitters and ring resonators). © VDE VERLAG GMBH.
paper
Integrated circuits; Integrated optoelectronics; Photonics;
English
35th European Conference on Optical Communication, ECOC 2009 - 20 September 2009through 24 September 2009
2009
European Conference on Optical Communication, ECOC
9781424450961
2009
5287090
none
Bordas, F., Roelkens, G., Zhang, R., Geluk, E., Karouta, F., Van Der Tol, J., et al. (2009). Compact passive devices in InP membrane on silicon. In European Conference on Optical Communication, ECOC. VDE VERLAG GMBH.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/554326
Citazioni
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 1
Social impact