Mid-infrared emission from InAs quantum dots, wells, and dots on well nanostructures grown on InP (100) by metal organic vapor phase epitaxy

A detailed analysis to extend the emission wavelength of InAs/InP nanostructures is presented employing InAs quantum dots (QDs), InAs quantum wells (QWs), and a combination of InAs QDs and QWs grown on InGaAsP/InP (100) by metal organic vapor phase epitaxy. First the optimized growth conditions of InAs QDs are established and an emission wavelength of 2.16 μm is achieved by capping with strain reducing InGaAs layers. Second, InAs QWs are grown under metal-stable conditions with the longest emission wavelength of 2.26 μm for a 4 nm QW. Finally, a combined InAs QDs on QW structure is realized. The InAs QD density is drastically increased on the QW and the longest emission wavelength of 2.46 μm is obtained at 6 K from sparse huge QDs. These findings open routes to extend the emission wavelength in the InAs/InP materials system beyond 2.4 μm using InAs QDs on QW structures. © 2009 American Institute of Physics.