Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640 °C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths. © 2010 American Institute of Physics.
Wang, H., Yuan, J., Van Veldhoven, R., De Vries, T., Smalbrugge, B., Geluk, E., et al. (2010). Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties. In SPECIAL TOPIC: SELECTED PAPERS FROM THE INTERNATIONAL CONFERENCE ON FLEXIBLE AND PRINTED ELECTRONICS, JEJU ISLAND, KOREA, 2009. American Institute of Physics [10.1063/1.3491025].
Planarization of InP pyramids containing integrated InAs quantum dots and their optical properties
Notzel R.
2010
Abstract
Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth temperature due to suppression of three-dimensional growth on the pyramids. The height differences are less than 30 nm after nominal 700 nm InP regrowth at 640 °C. Most important, the integrated QDs maintain good optical quality after regrowth for the realization of integrated nanophotonic devices and circuits operating at telecom wavelengths. © 2010 American Institute of Physics.
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