The physics mechanism behind the polarity effect at the basis of the Single-chalcogenide Xpoint Memory (SXM) is investigated through dedicated experiments, DFT-based atomistic models and TCAD simulations. The resulting model takes into account the modification of the chalcogenide glass band structure attained upon quenching under high electric field and current. Once implemented inside a TCAD simulation tool, the model is capable of matching all of the relevant experimental trends of the SXM window vs active material thickness, temperature, and alloy stoichiometry. This is the first physically based model able to explain the basic functional characteristics of the SXM memory technology.
Fantini, P., Ghetti, A., Varesi, E., Pirovano, A., Baratella, D., Ribaldone, C., et al. (2024). VT window model of the Single-chalcogenide Xpoint Memory (SXM). In Technical Digest - International Electron Devices Meeting, IEDM (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/IEDM50854.2024.10873337].
VT window model of the Single-chalcogenide Xpoint Memory (SXM)
Baratella D.;Ribaldone C.;Campi D.;Bernasconi M.;
2024
Abstract
The physics mechanism behind the polarity effect at the basis of the Single-chalcogenide Xpoint Memory (SXM) is investigated through dedicated experiments, DFT-based atomistic models and TCAD simulations. The resulting model takes into account the modification of the chalcogenide glass band structure attained upon quenching under high electric field and current. Once implemented inside a TCAD simulation tool, the model is capable of matching all of the relevant experimental trends of the SXM window vs active material thickness, temperature, and alloy stoichiometry. This is the first physically based model able to explain the basic functional characteristics of the SXM memory technology.
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