The spectral dependence of the photoluminescence recombination lifetime has been measured for individual self-assembled InGaAs/GaAs quantum dots, over the entire emission envelope. The measurements show a rising trend with increasing emission wavelength, increasing from 680 ps at 900 nm to about 1020 ps at 990 nm. Measurements of the out-of-plane diamagnetic coefficients for the dots show almost no correlation with wavelength. As a result, the rising trend in the lifetimes with wavelength is interpreted in terms of the emission energy being predominantly determined by the dot height, with higher dots exhibiting longer lifetimes. © 2010 American Institute of Physics.
Campbell-Ricketts, T., Kleemans, N., Notzel, R., Silov, A., Koenraad, P. (2010). The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots. APPLIED PHYSICS LETTERS, 96(3) [10.1063/1.3293294].
The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots
Notzel R.;
2010
Abstract
The spectral dependence of the photoluminescence recombination lifetime has been measured for individual self-assembled InGaAs/GaAs quantum dots, over the entire emission envelope. The measurements show a rising trend with increasing emission wavelength, increasing from 680 ps at 900 nm to about 1020 ps at 990 nm. Measurements of the out-of-plane diamagnetic coefficients for the dots show almost no correlation with wavelength. As a result, the rising trend in the lifetimes with wavelength is interpreted in terms of the emission energy being predominantly determined by the dot height, with higher dots exhibiting longer lifetimes. © 2010 American Institute of Physics.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
