We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum. © 2010 American Institute of Physics.
Urbanczyk, A., Hamhuis, G., Notzel, R. (2010). Strain-driven alignment of in nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission. APPLIED PHYSICS LETTERS, 96(11) [10.1063/1.3358122].
Strain-driven alignment of in nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission
Notzel R.
2010
Abstract
We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum. © 2010 American Institute of Physics.
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