In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed. © 2010 IEEE.
Bente, E., Tahvili, S., Tilma, B., Kotani, J., Smit, M., Notzel, R. (2010). Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 μm to 1.8 μm region. In 2010 12th International Conference on Transparent Optical Networks, ICTON 2010 (pp.1-4) [10.1109/ICTON.2010.5549095].
Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 μm to 1.8 μm region
Notzel R.
2010
Abstract
In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed. © 2010 IEEE.
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