We report growth of crystalline In islands on GaAs (100) by molecular beam epitaxy at low temperatures. The islands have a pyramidlike shape with well defined facets and epitaxial relation with the substrate. They are of nanoscale dimensions with high density. Above a certain substrate temperature, associated with the melting point of In, noncrystalline round shaped islands form with larger size and lower density. Upon conversion of the In islands into InAs islands under As flux, the final shape does not depend on the original crystalline state but on the annealing temperature of the InAs islands. Clear photoluminescence is observed from InAs quantum dots after conversion of the crystalline In islands. © 2010 American Institute of Physics.
Urbanczyk, A., Hamhuis, G., Notzel, R. (2010). In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties. JOURNAL OF APPLIED PHYSICS, 107(1) [10.1063/1.3269700].
In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties
Notzel R.
2010
Abstract
We report growth of crystalline In islands on GaAs (100) by molecular beam epitaxy at low temperatures. The islands have a pyramidlike shape with well defined facets and epitaxial relation with the substrate. They are of nanoscale dimensions with high density. Above a certain substrate temperature, associated with the melting point of In, noncrystalline round shaped islands form with larger size and lower density. Upon conversion of the In islands into InAs islands under As flux, the final shape does not depend on the original crystalline state but on the annealing temperature of the InAs islands. Clear photoluminescence is observed from InAs quantum dots after conversion of the crystalline In islands. © 2010 American Institute of Physics.
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