The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 μm to the 1.55 μm telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays. © 2009 Elsevier B.V. All rights reserved.
Sritirawisarn, N., van Otten, F., Soto Rodriguez, P., Wera, J., Notzel, R. (2010). Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (3 1 1)B substrates. JOURNAL OF CRYSTAL GROWTH, 312(2), 164-168 [10.1016/j.jcrysgro.2009.10.017].
Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (3 1 1)B substrates
Notzel R.
2010
Abstract
The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 μm to the 1.55 μm telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays. © 2009 Elsevier B.V. All rights reserved.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
