In this study, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors (SLRs), with an arrayed waveguide grating (AWG) as frequency-selective device, and semiconductor optical amplifiers as gain sections. The power is out coupled from the cavity using a side diffraction order of the AWG. Simultaneous laser operation is provided for four wavelengths/cavities in the device. The termination of the laser cavities with integrated SLRs avoids using high-reflection coating. Only anti-reflection coating is used in the output facet of the chip. © 2011 The Institution of Engineering and Technology.
Munoz, P., Garcia-Olcina, R., Habib, C., Chen, L., Leijtens, X., Domenech, J., et al. (2011). Sagnac loop reflector and arrayed waveguide grating-based multi-wavelength laser monolithically integrated on InP. IET OPTOELECTRONICS, 5(5), 207-210 [10.1049/iet-opt.2010.0066].
Sagnac loop reflector and arrayed waveguide grating-based multi-wavelength laser monolithically integrated on InP
Notzel R.;
2011
Abstract
In this study, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors (SLRs), with an arrayed waveguide grating (AWG) as frequency-selective device, and semiconductor optical amplifiers as gain sections. The power is out coupled from the cavity using a side diffraction order of the AWG. Simultaneous laser operation is provided for four wavelengths/cavities in the device. The termination of the laser cavities with integrated SLRs avoids using high-reflection coating. Only anti-reflection coating is used in the output facet of the chip. © 2011 The Institution of Engineering and Technology.
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