The application of the wavelength range of 1600 nm to 1800nm in optical coherent tomography (OCT) is attractive for its deeper penetration through the tissue due to a reduction of scattering [1]. One of the important elements in the OCT setup is the photodetector. The performance of commercial standard InGaAs detectors is limited due to low response for wavelengths above 1600 nm and p-doped InGaAs detectors have a significantly higher noise level. Thus a low noise photodetector working efficiently in this wavelength region is desired. In this contribution, we present our first results on quantum-dot (QD) waveguide photodetectors, which are realized by applying a reverse-bias voltage on a quantum dot semiconductor optical amplifier (QDSOA). © 2011 IEEE.
Jiao, Y., Tilma, B., Kotani, J., Notzel, R., Smit, M., Bente, E. (2011). An InAs/InP(100) QD waveguide photodetector for OCT application. In 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 (pp.1-1) [10.1109/CLEOE.2011.5942902].
An InAs/InP(100) QD waveguide photodetector for OCT application
Notzel R.;
2011
Abstract
The application of the wavelength range of 1600 nm to 1800nm in optical coherent tomography (OCT) is attractive for its deeper penetration through the tissue due to a reduction of scattering [1]. One of the important elements in the OCT setup is the photodetector. The performance of commercial standard InGaAs detectors is limited due to low response for wavelengths above 1600 nm and p-doped InGaAs detectors have a significantly higher noise level. Thus a low noise photodetector working efficiently in this wavelength region is desired. In this contribution, we present our first results on quantum-dot (QD) waveguide photodetectors, which are realized by applying a reverse-bias voltage on a quantum dot semiconductor optical amplifier (QDSOA). © 2011 IEEE.
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