We report growth of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy with low density of 2 μm -2 by conversion of In nanocrystals deposited at low temperatures. The total amount of InAs used is about one monolayer, which is less than the critical thickness for conventional StranskiKrastanov QDs. We also demonstrate the importance of the starting surface reconstruction for obtaining uniform QDs. The QD emission wavelength is easily tunable upon post-growth annealing with no wetting layer signal visible for short anneals. Microphotoluminescence measurements reveal well separated and sharp emission lines of individual QDs. © 2012 Elsevier B.V.
Urbanczyk, A., Notzel, R. (2012). Low-density InAs QDs with subcritical coverage obtained by conversion of in nanocrystals. JOURNAL OF CRYSTAL GROWTH, 341(1), 24-26 [10.1016/j.jcrysgro.2011.12.068].
Low-density InAs QDs with subcritical coverage obtained by conversion of in nanocrystals
Notzel R.
2012
Abstract
We report growth of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy with low density of 2 μm -2 by conversion of In nanocrystals deposited at low temperatures. The total amount of InAs used is about one monolayer, which is less than the critical thickness for conventional StranskiKrastanov QDs. We also demonstrate the importance of the starting surface reconstruction for obtaining uniform QDs. The QD emission wavelength is easily tunable upon post-growth annealing with no wetting layer signal visible for short anneals. Microphotoluminescence measurements reveal well separated and sharp emission lines of individual QDs. © 2012 Elsevier B.V.
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