The composition, strain and surface morphology of (0001)InGaN layers are investigated as a function of growth temperature (460-645°C) and impinging In flux. Three different growth regimes: nitrogen-rich, metal-rich and intermediate metal-rich, are clearly identified and found to be in correlation with surface morphology and strain relaxation. Best epilayers' quality is obtained when growing under intermediate metal-rich conditions, with 1-2 monolayers thick In ad-coverage. For a given In flux, the In incorporation decreases with increasing growth temperature due to InN thermal decomposition that follows an Arrhenius behavior with 1.84±0.12 eV activation energy. © 2012 Elsevier B.V. All rights reserved.
Gacevic, Z., Gomez, V., Garcia Lepetit, N., Soto Rodriguez, P., Bengoechea, A., Fernandez-Garrido, S., et al. (2013). A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH, 364, 123-127 [10.1016/j.jcrysgro.2012.11.031].
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
Notzel R.;
2013
Abstract
The composition, strain and surface morphology of (0001)InGaN layers are investigated as a function of growth temperature (460-645°C) and impinging In flux. Three different growth regimes: nitrogen-rich, metal-rich and intermediate metal-rich, are clearly identified and found to be in correlation with surface morphology and strain relaxation. Best epilayers' quality is obtained when growing under intermediate metal-rich conditions, with 1-2 monolayers thick In ad-coverage. For a given In flux, the In incorporation decreases with increasing growth temperature due to InN thermal decomposition that follows an Arrhenius behavior with 1.84±0.12 eV activation energy. © 2012 Elsevier B.V. All rights reserved.
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