We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 μm. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs. © 2013 American Institute of Physics.
Urbanczyk, A., Keizer, J., Koenraad, P., Notzel, R. (2013). Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of in nanocrystals. APPLIED PHYSICS LETTERS, 102(7) [10.1063/1.4792700].
Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of in nanocrystals
Notzel R.
2013
Abstract
We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 μm. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs. © 2013 American Institute of Physics.
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