We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm-2 with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W·cm-2 power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm-2 with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61μmol·h-1·cm-2 for the InGaN nanowalls and InGaN layer, respectively, revealing ∼57% enhancement for the nanowalls. © 2014 AIP Publishing LLC.
Alvi, N., Soto Rodriguez, P., Kumar, P., Gomez, V., Aseev, P., Alvi, A., et al. (2014). Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network. APPLIED PHYSICS LETTERS, 104(22) [10.1063/1.4881324].
Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network
Notzel R.
2014
Abstract
We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm-2 with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W·cm-2 power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm-2 with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61μmol·h-1·cm-2 for the InGaN nanowalls and InGaN layer, respectively, revealing ∼57% enhancement for the nanowalls. © 2014 AIP Publishing LLC.
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