Light to hydrogen conversion via water splitting is of immense interest as a clean, storable, and renewable energy source (Tachibana et al., 2012 [1]; Maeda and Domen, 2010 [2]; van de Krol et al., 2008 [3]; van Dorp et al., 2009 [4]; Kudo and Miseki, 2009 [5]) but efficient materials need to be found. To solve, InGaN has properties ideally suited and we demonstrate here that epitaxial InN quantum dots (QDs) more than double the photoelectrochemical (PEC) water splitting efficiency of an In0.54Ga0.46N photoelectrode. The InN/In0.54Ga0.46N-QDs-photoelectrode reveals a maximum incident-photon-to-current-conversion efficiency (IPCE) of up to 56% at a wavelength of 600nm with hydrogen generation rate of 133 μmolh-1cm-2 at zero voltage under illumination of a 1000W Xenon arc lamp. The bare In0.54Ga0.46N-layer-photoelectrode reveals a much lower IPCE of 24% with hydrogen generation rate of 59 μmolh-1cm-2. •Highly efficient hydrogen generation.•Excellent stability over time.•At zero bias matched to white light.•Ideal materials plus low-dimensional properties.
Alvi, N., Soto Rodriguez, P., Aseev, P., Gomez, V., Alvi, A., Hassan, W., et al. (2015). InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage. NANO ENERGY, 13, 291-297 [10.1016/j.nanoen.2015.02.017].
InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage
Notzel R.
2015
Abstract
Light to hydrogen conversion via water splitting is of immense interest as a clean, storable, and renewable energy source (Tachibana et al., 2012 [1]; Maeda and Domen, 2010 [2]; van de Krol et al., 2008 [3]; van Dorp et al., 2009 [4]; Kudo and Miseki, 2009 [5]) but efficient materials need to be found. To solve, InGaN has properties ideally suited and we demonstrate here that epitaxial InN quantum dots (QDs) more than double the photoelectrochemical (PEC) water splitting efficiency of an In0.54Ga0.46N photoelectrode. The InN/In0.54Ga0.46N-QDs-photoelectrode reveals a maximum incident-photon-to-current-conversion efficiency (IPCE) of up to 56% at a wavelength of 600nm with hydrogen generation rate of 133 μmolh-1cm-2 at zero voltage under illumination of a 1000W Xenon arc lamp. The bare In0.54Ga0.46N-layer-photoelectrode reveals a much lower IPCE of 24% with hydrogen generation rate of 59 μmolh-1cm-2. •Highly efficient hydrogen generation.•Excellent stability over time.•At zero bias matched to white light.•Ideal materials plus low-dimensional properties.
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