We demonstrate an all-solid-state potentiometric sensor constructed from solid-state InN/InGaN sensing-and reference electrodes with the epitaxial InN/InGaN layers directly grown on Si substrates. The sensor, evaluated in KCl aqueous solution, exhibits super-Nernstian sensitivity of-78 mV/decade with good linearity for concentrations of 0.01-1 M, which is the physiologically relevant range. Good stability and re-usability are demonstrated by a long-Time drift below 0.2 mV h-1 and standard deviation of 8 mV for repeated measurements over 10 d. These properties fulfil the requirements for compact, robust and highly sensitive all-solid-state sensors and sensor arrays.
Xie, L., Wang, P., Yin, H., Zhou, G., Notzel, R. (2020). All InN/InGaN solid-state potentiometric chloride sensor with super Nernstian sensitivity. APPLIED PHYSICS EXPRESS, 13(2) [10.35848/1882-0786/ab67d3].
All InN/InGaN solid-state potentiometric chloride sensor with super Nernstian sensitivity
Notzel R.
2020
Abstract
We demonstrate an all-solid-state potentiometric sensor constructed from solid-state InN/InGaN sensing-and reference electrodes with the epitaxial InN/InGaN layers directly grown on Si substrates. The sensor, evaluated in KCl aqueous solution, exhibits super-Nernstian sensitivity of-78 mV/decade with good linearity for concentrations of 0.01-1 M, which is the physiologically relevant range. Good stability and re-usability are demonstrated by a long-Time drift below 0.2 mV h-1 and standard deviation of 8 mV for repeated measurements over 10 d. These properties fulfil the requirements for compact, robust and highly sensitive all-solid-state sensors and sensor arrays.
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