We introduce a diode that operates differently from p–n junction or Schottky diodes. It is based on a p-Si/n-In0.4Ga0.6N heterojunction with a SiNx interlayer. With around 40% In content, the valence and conduction bands of Si and InGaN are aligned. The behavior of the p-Si/n-InGaN interface is ohmic due to electron–hole recombination and generation at forward and reverse bias. Upon insertion of a sufficiently thick SiNx interlayer, the forward current is governed by tunneling. The reverse current is blocked because electron–hole generation is no longer possible together at the interface. A pronounced, weakly temperature-dependent rectifying behavior results.
Wang, X., Wang, P., Yin, H., Zhou, G., Notzel, R. (2020). An InGaN/SiN x/Si Uniband Diode. JOURNAL OF ELECTRONIC MATERIALS, 49(6), 3577-3582 [10.1007/s11664-020-08038-5].
An InGaN/SiN x/Si Uniband Diode
Notzel R.
2020
Abstract
We introduce a diode that operates differently from p–n junction or Schottky diodes. It is based on a p-Si/n-In0.4Ga0.6N heterojunction with a SiNx interlayer. With around 40% In content, the valence and conduction bands of Si and InGaN are aligned. The behavior of the p-Si/n-InGaN interface is ohmic due to electron–hole recombination and generation at forward and reverse bias. Upon insertion of a sufficiently thick SiNx interlayer, the forward current is governed by tunneling. The reverse current is blocked because electron–hole generation is no longer possible together at the interface. A pronounced, weakly temperature-dependent rectifying behavior results.
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