Silicon for Thermoelectric Energy Harvesting Applications

This chapter focuses on the interplay between preparation methodology and thermoelectric performances, as the former rules critical characteristics of the nanostructure that are nowadays clearly known to be in control of the transport properties of the material. It then discusses usability and applications of silicon (Si) nanostructures and provides an outlook to frontiers in research and development of dimensionally constrained Si for thermoelectricity. The chapter further presents a short description of some of the most common techniques accessible for the growth of Si nanowire (SiNW). The thermoelectric properties of top-down fabricated SiNWs are in any respect similar to those obtained by bottom-up growth. However, some important differences may arise depending on the crystal texture of the nanowires. This is particularly relevant in top-down fabrication since in this case the nanowires can be either single-crystal or polycrystalline, depending on the preparation method.