We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations show the presence of Ga/GaAs core-shell structures that we validate experimentally. A fully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy. © 2013 American Physical Society.

Reyes, K., Smereka, P., Nothern, D., Millunchick, J., Bietti, S., Somaschini, C., et al. (2013). Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 87(16) [10.1103/PhysRevB.87.165406].

Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory

BIETTI, SERGIO;SOMASCHINI, CLAUDIO;SANGUINETTI, STEFANO;
2013

Abstract

We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations show the presence of Ga/GaAs core-shell structures that we validate experimentally. A fully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy. © 2013 American Physical Society.
Articolo in rivista - Articolo scientifico
GaAs, Molecular Beam Epitaxy, quantum nanostructures
English
2013
87
16
none
Reyes, K., Smereka, P., Nothern, D., Millunchick, J., Bietti, S., Somaschini, C., et al. (2013). Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 87(16) [10.1103/PhysRevB.87.165406].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/53275
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