We present an experimental investigation of the crystallization dynamics of Ga nano-droplets under As flux. The transformation of the metallic Ga contained in the droplets into a GaAs nano-island proceeds by increasing the size of a tiny ring of GaAs which is formed just after the Ga deposition at the rim of a droplet. The GaAs crystallization rate depends linearly on the liquid-solid interface area. The maximum growth rate is set by the As flux impinging on the droplet, thus showing an efficient As incorporation and transport despite the predicted low solubility of the As in metallic Ga at the crystallization temperatures. © 2013 IOP Publishing Ltd.

Bietti, S., Somaschini, C., Sanguinetti, S. (2013). Crystallization kinetics of Ga metallic nano-droplets under As flux. NANOTECHNOLOGY, 24(20), 205603 [10.1088/0957-4484/24/20/205603].

Crystallization kinetics of Ga metallic nano-droplets under As flux

BIETTI, SERGIO;SOMASCHINI, CLAUDIO;SANGUINETTI, STEFANO
2013

Abstract

We present an experimental investigation of the crystallization dynamics of Ga nano-droplets under As flux. The transformation of the metallic Ga contained in the droplets into a GaAs nano-island proceeds by increasing the size of a tiny ring of GaAs which is formed just after the Ga deposition at the rim of a droplet. The GaAs crystallization rate depends linearly on the liquid-solid interface area. The maximum growth rate is set by the As flux impinging on the droplet, thus showing an efficient As incorporation and transport despite the predicted low solubility of the As in metallic Ga at the crystallization temperatures. © 2013 IOP Publishing Ltd.
Articolo in rivista - Articolo scientifico
GaAs, Molecular Beam Epitaxy, quantum nanostructures
English
2013
24
20
205603
none
Bietti, S., Somaschini, C., Sanguinetti, S. (2013). Crystallization kinetics of Ga metallic nano-droplets under As flux. NANOTECHNOLOGY, 24(20), 205603 [10.1088/0957-4484/24/20/205603].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/53274
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