In this work we show the possibility to increase the optical quality of quantum dots grown by droplet epitaxy on Ge-on-Si substrates in terms of single dot emission linewidth, decay time and efficiency by operating on the As pressure during the crystallization step without increasing the thermal budget. © 2013 Elsevier B.V. All rights reserved.
Bietti, S., Cavigli, L., Minari, S., Adorno, S., Isella, G., Vinattieri, A., et al. (2013). Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy. JOURNAL OF CRYSTAL GROWTH, 378, 497-500 [10.1016/j.jcrysgro.2012.12.078].
Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy
BIETTI, SERGIO;ADORNO, SILVIA;SANGUINETTI, STEFANO
2013
Abstract
In this work we show the possibility to increase the optical quality of quantum dots grown by droplet epitaxy on Ge-on-Si substrates in terms of single dot emission linewidth, decay time and efficiency by operating on the As pressure during the crystallization step without increasing the thermal budget. © 2013 Elsevier B.V. All rights reserved.
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