We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.
Sarti, F., Muñoz Matutano, G., Bietti, S., Vinattieri, A., Sanguinetti, S., Gurioli, M. (2013). Optical characterization of individual GaAs quantum dots grown with height control technique. JOURNAL OF APPLIED PHYSICS, 114(12), 124301 [10.1063/1.4821901].
Optical characterization of individual GaAs quantum dots grown with height control technique
BIETTI, SERGIO;SANGUINETTI, STEFANO;
2013
Abstract
We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.
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