We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.

Sarti, F., Muñoz Matutano, G., Bietti, S., Vinattieri, A., Sanguinetti, S., Gurioli, M. (2013). Optical characterization of individual GaAs quantum dots grown with height control technique. JOURNAL OF APPLIED PHYSICS, 114(12), 124301 [10.1063/1.4821901].

Optical characterization of individual GaAs quantum dots grown with height control technique

BIETTI, SERGIO;SANGUINETTI, STEFANO;
2013

Abstract

We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.
Articolo in rivista - Articolo scientifico
GaAs, Molecular Beam Epitaxy, quantum nanostructures, photoluminescence
English
2013
114
12
124301
none
Sarti, F., Muñoz Matutano, G., Bietti, S., Vinattieri, A., Sanguinetti, S., Gurioli, M. (2013). Optical characterization of individual GaAs quantum dots grown with height control technique. JOURNAL OF APPLIED PHYSICS, 114(12), 124301 [10.1063/1.4821901].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/53271
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