The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.

Sarti, F., Muñoz Matutano, G., Bauer, D., Dotti, N., Bietti, S., Isella, G., et al. (2013). Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates. JOURNAL OF APPLIED PHYSICS, 114(22), 224314 [10.1063/1.4844375].

Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

BIETTI, SERGIO;SANGUINETTI, STEFANO;
2013

Abstract

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.
Articolo in rivista - Articolo scientifico
GaAs, Molecular Beam Epitaxy, quantum nanostructures, photoluminescence
English
2013
114
22
224314
none
Sarti, F., Muñoz Matutano, G., Bauer, D., Dotti, N., Bietti, S., Isella, G., et al. (2013). Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates. JOURNAL OF APPLIED PHYSICS, 114(22), 224314 [10.1063/1.4844375].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/53270
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