In this work, we investigate the optical properties of self-standing Si nanostructures (SiNS) as-grown, by an inductively coupled plasma torch process, and after their annealing under N2 flux at 1200 °C. We show that as-grown SiNS are embedded in a silicon oxide shell while part of the annealed SiNS transforms into silicon nitrides or oxynitrides. The analysis of the photoluminescence spectra and maps of both as-grown and annealed SiNS enabled us to confirm the occurrence of quantum confinement effects in the ultra-small SiNS and to highlight the role played by the silicon oxide, silicon nitrides, and silicon oxynitrides nanophases in the photoluminescence emission.
Freddi, S., Fabbri, F., Cannizzaro, A., Agati, M., Dolbec, R., Drera, G., et al. (2020). High-temperature nitrogen annealing induced bonding states and photoluminescence changes in inductively coupled plasma torch synthesized silicon nanostructures. JOURNAL OF APPLIED PHYSICS, 128(2) [10.1063/5.0012515].
High-temperature nitrogen annealing induced bonding states and photoluminescence changes in inductively coupled plasma torch synthesized silicon nanostructures
Drera G;
2020
Abstract
In this work, we investigate the optical properties of self-standing Si nanostructures (SiNS) as-grown, by an inductively coupled plasma torch process, and after their annealing under N2 flux at 1200 °C. We show that as-grown SiNS are embedded in a silicon oxide shell while part of the annealed SiNS transforms into silicon nitrides or oxynitrides. The analysis of the photoluminescence spectra and maps of both as-grown and annealed SiNS enabled us to confirm the occurrence of quantum confinement effects in the ultra-small SiNS and to highlight the role played by the silicon oxide, silicon nitrides, and silicon oxynitrides nanophases in the photoluminescence emission.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
