The effects of carrier thermal escape and retrapping on the temperature dependence of the photoluminescence of InAs/GaAs self-assembled quantum dots are investigated. A systematic experimental study of the temperature evolution of the photoluminescence spectra in two different sets of samples is reported. The photoluminescence behavior is well reproduced in terms of a steady state model for the carrier dynamics which takes into account the quantum-dot size distribution, random population effects, and carrier capture, relaxation, and retrapping. The relative contributions of these processes to the photoluminescence thermal quenching is discussed.

Sanguinetti, S., Henini, M., Alessi, M., Capizzi, M., Frigeri, P., Franchi, S. (1999). Carrier thermal escape and retrapping in self-assembled quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 60(11), 8276-8283 [10.1103/PhysRevB.60.8276].

Carrier thermal escape and retrapping in self-assembled quantum dots

SANGUINETTI, STEFANO;
1999

Abstract

The effects of carrier thermal escape and retrapping on the temperature dependence of the photoluminescence of InAs/GaAs self-assembled quantum dots are investigated. A systematic experimental study of the temperature evolution of the photoluminescence spectra in two different sets of samples is reported. The photoluminescence behavior is well reproduced in terms of a steady state model for the carrier dynamics which takes into account the quantum-dot size distribution, random population effects, and carrier capture, relaxation, and retrapping. The relative contributions of these processes to the photoluminescence thermal quenching is discussed.
Articolo in rivista - Articolo scientifico
quantum dots; III-V semiconductors; photoluminescence
English
1999
60
11
8276
8283
none
Sanguinetti, S., Henini, M., Alessi, M., Capizzi, M., Frigeri, P., Franchi, S. (1999). Carrier thermal escape and retrapping in self-assembled quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 60(11), 8276-8283 [10.1103/PhysRevB.60.8276].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/516
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