In this paper, the performance of a new CVD reactor (called PE1O8) designed by LPE and developed in the European project REACTION to process uniform 4H-SiC homoepitaxy on 200 mm substrate is reported. Its tunable multi-zone injection system and new gas delivery configuration ensure the uniform gas distribution throughout the substrate. Excellent thickness and doping uniformity on 200 mm substrates are achieved with run-to-run variation less than 1.4% and 5.6% respectively.
Crippa, D., Azadmand, M., Mauceri, M., Preti, S., Puglisi, M., Vecchio, C. (2022). Opening Through 200 mm Silicon Carbide Epitaxy. In 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (pp.146-151). Trans Tech Publications Ltd [10.4028/p-369665].
Opening Through 200 mm Silicon Carbide Epitaxy
Azadmand M.;
2022
Abstract
In this paper, the performance of a new CVD reactor (called PE1O8) designed by LPE and developed in the European project REACTION to process uniform 4H-SiC homoepitaxy on 200 mm substrate is reported. Its tunable multi-zone injection system and new gas delivery configuration ensure the uniform gas distribution throughout the substrate. Excellent thickness and doping uniformity on 200 mm substrates are achieved with run-to-run variation less than 1.4% and 5.6% respectively.
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