Process Control Solutions for GaN-on-Si Devices in a Production Line

Our paper will present defect control solutions for manufacturing Gallium Nitride (GaN) devices in a silicon production line. The flexibility of defect inspection and review tools allowed us to successfully implement a full defectivity control plan for both silicon and GaN-on-Si wafers. In addition, two novel methods were employed for the detection of a GaN-specific defect. First, SEM review equipment was used as an inspection tool to detect and enumerate the number of killer defects and second, the intensity output of an inspection system was utilized for high-speed mapping of the overall defectivity on a wafer.