We perform ab initio calculations to study the electronic and phonon properties of bulk CdS for wurtzite (wz) and zinc blende (zb) phases. The density of states and bandstructure suggest that CdS acts like a direct bandgap semiconductor with a bandgap of ~ 1 eV for both the phases. We find that both the phases experience LO-TO splitting and show peaks for multiple phonon frequencies across the phonon spectrum. We implement DFT coupled with quasi harmonic approximation (QHA) to calculate the Gibbs free energy at 0 GPa for a temperature range (0 to 2200) K. We infer that under ambient conditions (285 to 300) K wz-CdS phase is stable, while at low temperature conditions both the phases exhibit similar properties. We predict a possible phase transition from zb to wz at 200 K.

Reddy, G., Sowmya, A., Pudhota, A., Chakraborty, S., Ravikumar, A. (2022). Effects of Temperature Induced Phase Transition in Bulk CdS Structures. In VLSI SATA 2022 - 3rd IEEE International Conference on VLSI Systems, Architecture, Technology and Applications. Institute of Electrical and Electronics Engineers Inc. [10.1109/VLSISATA54927.2022.10046628].

Effects of Temperature Induced Phase Transition in Bulk CdS Structures

Ravikumar A.
2022

Abstract

We perform ab initio calculations to study the electronic and phonon properties of bulk CdS for wurtzite (wz) and zinc blende (zb) phases. The density of states and bandstructure suggest that CdS acts like a direct bandgap semiconductor with a bandgap of ~ 1 eV for both the phases. We find that both the phases experience LO-TO splitting and show peaks for multiple phonon frequencies across the phonon spectrum. We implement DFT coupled with quasi harmonic approximation (QHA) to calculate the Gibbs free energy at 0 GPa for a temperature range (0 to 2200) K. We infer that under ambient conditions (285 to 300) K wz-CdS phase is stable, while at low temperature conditions both the phases exhibit similar properties. We predict a possible phase transition from zb to wz at 200 K.
paper
Energy gap; Free energy; Gibbs free energy; II-VI semiconductors; Phonons; Temperature; Wide band gap semiconductors; Zinc sulfide;
English
3rd IEEE International Conference on VLSI Systems, Architecture, Technology and Applications, VLSI SATA 2022 - 15 December 2022 through 17 December 2022
2022
VLSI SATA 2022 - 3rd IEEE International Conference on VLSI Systems, Architecture, Technology and Applications
9781665455466
2022
reserved
Reddy, G., Sowmya, A., Pudhota, A., Chakraborty, S., Ravikumar, A. (2022). Effects of Temperature Induced Phase Transition in Bulk CdS Structures. In VLSI SATA 2022 - 3rd IEEE International Conference on VLSI Systems, Architecture, Technology and Applications. Institute of Electrical and Electronics Engineers Inc. [10.1109/VLSISATA54927.2022.10046628].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/505979
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