We present a systematic study of the effects of in situ annealing of strain-free GaAs/AlGaAs quantum dots grown by droplet epitaxy, identifying the relation between the achievable shape anisotropy, aspect ratio and faceting and introducing a diffusion model able to describe the dot transformation during the annealing step
Adorno, S., Bietti, S., Sanguinetti, S. (2013). Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy. JOURNAL OF CRYSTAL GROWTH, 378(1), 515-518 [10.1016/j.jcrysgro.2012.11.006].
Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy
ADORNO, SILVIAPrimo
;BIETTI, SERGIOSecondo
;SANGUINETTI, STEFANO
2013
Abstract
We present a systematic study of the effects of in situ annealing of strain-free GaAs/AlGaAs quantum dots grown by droplet epitaxy, identifying the relation between the achievable shape anisotropy, aspect ratio and faceting and introducing a diffusion model able to describe the dot transformation during the annealing step
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